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Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/32236
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dc.contributor.authorAndújar Bella, José Luis-
dc.contributor.authorBertrán Serra, Enric-
dc.contributor.authorCanillas i Biosca, Adolf-
dc.contributor.authorCampmany i Guillot, Josep, 1966--
dc.contributor.authorSerra-Miralles, J.-
dc.contributor.authorRoch i Cunill, Carles-
dc.contributor.authorLloret, A.-
dc.date.accessioned2012-10-09T09:10:41Z-
dc.date.available2012-10-09T09:10:41Z-
dc.date.issued1992-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2445/32236-
dc.description.abstractHydrogenated amorphous silicon (a‐Si:H) thin films have been obtained from pure SiH4 rf discharges by using the square wave modulation (SQWM) method. Film properties have been studied by means of spectroellipsometry, thermal desorption spectrometry, photothermal deflection spectroscopy and electrical conductivity measurements, as a function of the modulation frequency of the rf power amplitude (0.2-4000 Hz). The films deposited at frequencies about 1 kHz show the best structural and optoelectronic characteristics. Based upon the experimental results, a qualitative model is presented, which points up the importance of plasma negative ions in the deposition of a‐Si:H from SQWM rf discharges through their influence on powder particle formation.-
dc.format.extent3 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.351229-
dc.relation.ispartofJournal of Applied Physics, 1992, vol. 71, num. 3, p. 1546-1548-
dc.relation.urihttp://dx.doi.org/10.1063/1.351229-
dc.rights(c) American Institute of Physics , 1992-
dc.sourceArticles publicats en revistes (Física Aplicada)-
dc.subject.classificationSemiconductors amorfs-
dc.subject.classificationPel·lícules fines-
dc.subject.classificationSilici-
dc.subject.otherAmorphous semiconductors-
dc.subject.otherThin films-
dc.subject.otherSilicon-
dc.titleProperties of amorphous silicon thin films grown in square wave modulated silane rf discharges.eng
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec060160-
dc.date.updated2012-10-09T09:10:41Z-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
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