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http://hdl.handle.net/2445/32238
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DC Field | Value | Language |
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dc.contributor.author | Wang, W. L. | - |
dc.contributor.author | Polo Trasancos, Ma. del Carmen | - |
dc.contributor.author | Sánchez, G. | - |
dc.contributor.author | Cifre, J. | - |
dc.contributor.author | Esteve Pujol, Joan | - |
dc.date.accessioned | 2012-10-09T09:19:07Z | - |
dc.date.available | 2012-10-09T09:19:07Z | - |
dc.date.issued | 1996 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/2445/32238 | - |
dc.description.abstract | The internal stress and strain in boron‐doped diamond films grown by microwave plasma chemical vapor deposition (MWCVD) and hot filament CVD (HFCVD) were studied as a function of boron concentration. The total stress (thermal+intrinsic) was tensile, and the stress and strain increased with boron concentration. The stress and the strain measured in HFCVD samples were greater than those of MWCVD samples at the same boron concentration. The intrinsic tensile stress, 0.84 GPa, calculated by the grain boundary relaxation model, was in good agreement with the experimental value when the boron concentration in the films was below 0.3 at.%. At boron concentrations above 0.3 at.%, the tensile stress was mainly caused by high defect density, and induced by a node‐blocked sliding effect at the grain boundary | - |
dc.format.extent | 5 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | American Institute of Physics | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.362996 | - |
dc.relation.ispartof | Journal of Applied Physics, 1996, vol. 80, num. 3, p. 1846-1850 | - |
dc.relation.uri | http://dx.doi.org/10.1063/1.362996 | - |
dc.rights | (c) American Institute of Physics , 1996 | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Superfícies (Tecnologia) | - |
dc.subject.classification | Pel·lícules fines de diamant | - |
dc.subject.classification | Materials nanoestructurats | - |
dc.subject.other | Surfaces (Technology | - |
dc.subject.other | Diamond thin films | - |
dc.subject.other | Nanostructured materials | - |
dc.title | Internal stress and strain in heavily boron-doped diamond films grown by microwave plasma and hot filament chemical vapor deposition | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 109576 | - |
dc.date.updated | 2012-10-09T09:19:07Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
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109576.pdf | 88.53 kB | Adobe PDF | View/Open |
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