Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/33305
Title: Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering
Author: Prtljaga, Nikola
Navarro Urrios, Daniel
Tengattini, Andrea
Anopchenko, Aleksei
Ramirez Ramírez, Joan Manel
Rebled, J. M. (José Manuel)
Estradé Albiol, Sònia
Colonna, Jean-Philippe
Fedeli, Jean-Marc
Garrido Fernández, Blas
Pavesi, Lorenzo
Keywords: Ciència dels materials
Òptica
Materials science
Optics
Issue Date: 2012
Publisher: The Optical Society
Abstract: We have fabricated a series of thin (~50 nm) erbium-doped (by ion implantation) silicon-rich oxide films in the configuration that mitigates previously proposed mechanisms for loss of light emission capability of erbium ions. By combining the methods of optical, structural and electrical analysis, we identify the erbium ion clustering as a driving mechanism to low optical performance of this material. Experimental findings in this work clearly evidence inadequacy of the commonly employed optimization procedure when optical amplification is considered. We reveal that the significantly lower erbium ion concentrations are to be used in order to fully exploit the potential of this approach and achieve net optical gain.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1364/OME.2.001278
It is part of: Optical Materials Express, 2012, vol. 2, Issue 9, pp. 1278-1285
Related resource: http://dx.doi.org/10.1364/OME.2.001278
URI: http://hdl.handle.net/2445/33305
ISSN: 2159-3930
Appears in Collections:Articles publicats en revistes (Electrònica)
Articles publicats en revistes (Centres Científics i Tecnològics de la Universitat de Barcelona (CCiTUB))
Publicacions de projectes de recerca finançats per la UE

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