Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/34042
Title: Readout schemes for low noise single-photon avalanche diodes fabricated in conventional HV-CMOS technologies
Author: Vilella Figueras, Eva
Diéguez Barrientos, Àngel
Keywords: Microelectrònica
Detectors de radiació
Metall-òxid-semiconductors complementaris
Optoelectrònica
Col·lisions (Física nuclear)
Microelectronics
Nuclear counters
Complementary metal oxide semiconductors
Optoelectronics
Collisions (Nuclear physics)
Issue Date: 21-Feb-2013
Publisher: Elsevier B.V.
Abstract: Three different pixels based on single-photon avalanche diodes for triggered applications, such as fluorescence lifetime measurements and high energy physics experiments, are presented. Each pixel consists of a 20µm x 100µm (width x length) single photon avalanche diode and a monolithically integrated readout circuit. The sensors are operated in the gated mode of acquisition to reduce the probability to detect noise counts interferring with real radiation events. Each pixel includes a different readout circuit that allows to use low reverse bias overvoltages. Experimental results demonstrate that the three pixels present a similar behaviour. The pixels get rid of afterpulses and present a reduced dark count probability by applying the gated operation. Noise figures are further improved by using low reverse bias overvoltages. The detectors exhibit an input dynamic range of 13.35 bits with short gated"on" periods of 10ns and a reverse bias overvoltage of 0.5V. The three pixels have been fabricated in a standard HV-CMOS process.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.mejo.2013.01.008
It is part of: Microelectronics Journal, 2013
Related resource: http://dx.doi.org/10.1016/j.mejo.2013.01.008
URI: http://hdl.handle.net/2445/34042
ISSN: 0026-2692
Appears in Collections:Articles publicats en revistes (Electrònica)

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