Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/46883
Title: Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
Author: Berencén Ramírez, Yonder Antonio
Wutzler, R.
Rebohle, L.
Hiller, D.
Ramírez Ramírez, Joan Manel
Rodríguez, J. A.
Skorupa, Wolfgang
Garrido Fernández, Blas
Keywords: Díodes
Òptica
Fotònica
Nanotecnologia
Ions
Terres rares
Sílice
Metall-òxid-semiconductors complementaris
Diodes
Optics
Photonics
Nanotechnology
Ions
Rare earths
Silica
Complementary metal oxide semiconductors
Issue Date: 9-Sep-2013
Publisher: American Institute of Physics
Abstract: High optical power density of 0.5 mW/cm2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices. Electrical and electroluminescence mechanisms in these devices were investigated. The excitation cross section for the 543 nm Tb3+ emission was estimated under electrical pumping, resulting in a value of 8.2 × 10−14 cm2, which is one order of magnitude larger than one reported for Tb3+:SiO2 light emitting devices. These results demonstrate the potentiality of Tb+-implanted silicon nitride material for the development of integrated light sources compatible with Si technology.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.4820836
It is part of: Applied Physics Letters, 2013, vol. 103, num. 11, p. 111102-1-111102-4
Related resource: http://dx.doi.org/10.1063/1.4820836
URI: http://hdl.handle.net/2445/46883
ISSN: 0003-6951
Appears in Collections:Articles publicats en revistes (Electrònica)

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