Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47147
Title: Transparent conducting thin films by the co-sputtering of ZnO-ITO targets
Author: Carreras Seguí, Paz
Antony, Aldrin
Roldán, Rubén
Nos Aguilà, Oriol
Frigeri, Paolo Antonio
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
Keywords: Òxids metàl·lics
Semiconductors de gap ample
Pel·lícules fines
Cèl·lules solars
Optoelectrònica
Metallic oxides
Wide gap semiconductors
Thin films
Solar cells
Optoelectronics
Issue Date: 2010
Publisher: Wiley-VCH
Abstract: Transparent and conductive Zn-In-Sn-O (ZITO) amorphous thin films have been deposited at room temperature by the rf magnetron co-sputtering of ITO and ZnO targets. Co-sputtering gives the possibility to deposit multicomponent oxide thin films with different compositions by varying the power to one of the targets. In order to make ZITO films with different Zn content, a constant rf power of 50 W was used for the ITO target, where as the rf power to ZnO target was varied from 25 W to 150 W. The as deposited films showed an increase in Zn content ratio from 17 to 67 % as the power to ZnO target was increased from 25 to 150 W. The structural, electrical and optical properties of the as deposited films are reported. The films showed an average transmittance over 80% in the visible wavelength range. The electrical resistivity and optical band gap of the ZITO films were found to depend on the Zn content in the film. The ZITO films deposited at room temperature with lower Zn content ratios showed better optical transmission and electrical properties compared to ITO film.
Note: Versió preprint del document publicat a: http://dx.doi.org/10.1002/pssc.200982852
It is part of: physica status solidi (c), 2010, vol. 7, num. 3-4, p. 953-956
Related resource: http://dx.doi.org/10.1002/pssc.200982852
URI: http://hdl.handle.net/2445/47147
ISSN: 1862-6351
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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