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Title: Hot wire configuration for depositing device grade nano-crystalline silicon at high deposition rate
Author: Nos Aguilà, Oriol
Frigeri, Paolo Antonio
Bertomeu i Balagueró, Joan
Keywords: Nanoestructures
Deposició química en fase vapor
Espectroscòpia d'infraroigs per transformada de Fourier
Cèl·lules solars
Pel·lícules fines
Chemical vapor deposition
Fourier transform infrared spectroscopy
Solar cells
Thin films
Issue Date: 2011
Publisher: Elsevier B.V.
Abstract: The University of Barcelona is developing a pilot-scale hot wire chemical vapor deposition (HW-CVD) set up for the deposition of nano-crystalline silicon (nc-Si:H) on 10 cm × 10 cm glass substrate at high deposition rate. The system manages 12 thin wires of 0.15-0.2 mm diameter in a very dense configuration. This permits depositing very uniform films, with inhomogeneities lower than 2.5%, at high deposition rate (1.5-3 nm/s), and maintaining the substrate temperature relatively low (250 °C). The wire configuration design, based on radicals' diffusion simulation, is exposed and the predicted homogeneity is validated with optical transmission scanning measurements of the deposited samples. Different deposition series were carried out by varying the substrate temperature, the silane to hydrogen dilution and the deposition pressure. By means of Fourier transform infrared spectroscopy (FTIR), the evolution in time of the nc-Si:H vibrational modes was monitored. Particular importance has been given to the study of the material stability against post-deposition oxidation.
Note: Versió postprint del document publicat a:
It is part of: Thin Solid Films, 2011, vol. 519, num. 14, p. 4531-4534
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ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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