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http://hdl.handle.net/2445/47155
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DC Field | Value | Language |
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dc.contributor.author | Villar, Fernando | - |
dc.contributor.author | Antony, Aldrin | - |
dc.contributor.author | Escarré i Palou, Jordi | - |
dc.contributor.author | Ibarz, D. | - |
dc.contributor.author | Roldán Molinero, Rubén | - |
dc.contributor.author | Stella, Marco | - |
dc.contributor.author | Muñoz Ramos, David | - |
dc.contributor.author | Asensi López, José Miguel | - |
dc.contributor.author | Bertomeu i Balagueró, Joan | - |
dc.date.accessioned | 2013-10-18T11:58:41Z | - |
dc.date.available | 2013-10-18T11:58:41Z | - |
dc.date.issued | 2009 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/2445/47155 | - |
dc.description.abstract | Amorphous silicon n-i-p solar cells have been fabricated entirely by Hot-Wire Chemical Vapour Deposition (HW-CVD) at low process temperature < 150 °C. A textured-Ag/ZnO back reflector deposited on Corning 1737F by rf magnetron sputtering was used as the substrate. Doped layers with very good conductivity and a very less defective intrinsic a-Si:H layer were used for the cell fabrication. A double n-layer (μc-Si:H/a-Si:H) and μc-Si:H p-layer were used for the cell. In this paper, we report the characterization of these layers and the integration of these layers in a solar cell fabricated at low temperature. An initial efficiency of 4.62% has been achieved for the n-i-p cell deposited at temperatures below 150 °C over glass/Ag/ZnO textured back reflector. | - |
dc.format.extent | 12 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.relation.isformatof | Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2009.01.074 | - |
dc.relation.ispartof | Thin Solid Films, 2009, vol. 517, num. 12, p. 3575-3577 | - |
dc.relation.uri | http://dx.doi.org/10.1016/j.tsf.2009.01.074 | - |
dc.rights | (c) Elsevier B.V., 2009 | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Silici | - |
dc.subject.classification | Cèl·lules solars | - |
dc.subject.classification | Semiconductors amorfs | - |
dc.subject.classification | Deposició química en fase vapor | - |
dc.subject.classification | Temperatures baixes | - |
dc.subject.other | Silicon | - |
dc.subject.other | Solar cells | - |
dc.subject.other | Amorphous semiconductors | - |
dc.subject.other | Chemical vapor deposition | - |
dc.subject.other | Low temperatures | - |
dc.title | Amorphous silicon thin film solar cells deposited entirely by Hot-Wire Chemical Vapour Deposition at low temperature (<150 ºC) | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 561142 | - |
dc.date.updated | 2013-10-18T11:58:41Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
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561142.pdf | 296.11 kB | Adobe PDF | View/Open |
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