Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47285
Title: Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°C
Author: Muñoz Ramos, David
Voz Sánchez, Cristóbal
Martin Garcia, Isidro
Orpella, Albert
Puigdollers i González, Joaquim
Alcubilla González, Ramón
Villar, Fernando
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Damon-Lacoste, J.
Roca i Cabarrocas, P. (Pere)
Keywords: Deposició química en fase vapor
Cèl·lules solars
Teoria quàntica
Microelectrònica
Chemical vapor deposition
Solar cells
Quantum theory
Microelectronics
Issue Date: 2008
Publisher: Elsevier B.V.
Abstract: In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV-visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Steady-State Photoconductance (QSS-PC) technique allows us to estimate implicit open-circuit voltages near 700 mV for heterojunction emitters on p-type (0.8 Ω·cm) FZ silicon wafers. Finally, 1 cm 2 heterojunction solar cells with 15.4% conversion efficiencies (total area) have been fabricated on flat p-type (14 Ω·cm) CZ silicon wafers with aluminum back-surface-field contact.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2007.06.192
It is part of: Thin Solid Films, 2008, vol. 516, num. 5, p. 761-764
Related resource: http://dx.doi.org/10.1016/j.tsf.2007.06.192
URI: http://hdl.handle.net/2445/47285
ISSN: 0040-6090
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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