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http://hdl.handle.net/2445/47285
Title: | Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°C |
Author: | Muñoz Ramos, David Voz Sánchez, Cristóbal Martin Garcia, Isidro Orpella, Albert Puigdollers i González, Joaquim Alcubilla González, Ramón Villar, Fernando Bertomeu i Balagueró, Joan Andreu i Batallé, Jordi Damon-Lacoste, J. Roca i Cabarrocas, P. (Pere) |
Keywords: | Deposició química en fase vapor Cèl·lules solars Teoria quàntica Microelectrònica Chemical vapor deposition Solar cells Quantum theory Microelectronics |
Issue Date: | 2008 |
Publisher: | Elsevier B.V. |
Abstract: | In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV-visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Steady-State Photoconductance (QSS-PC) technique allows us to estimate implicit open-circuit voltages near 700 mV for heterojunction emitters on p-type (0.8 Ω·cm) FZ silicon wafers. Finally, 1 cm 2 heterojunction solar cells with 15.4% conversion efficiencies (total area) have been fabricated on flat p-type (14 Ω·cm) CZ silicon wafers with aluminum back-surface-field contact. |
Note: | Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2007.06.192 |
It is part of: | Thin Solid Films, 2008, vol. 516, num. 5, p. 761-764 |
URI: | http://hdl.handle.net/2445/47285 |
Related resource: | http://dx.doi.org/10.1016/j.tsf.2007.06.192 |
ISSN: | 0040-6090 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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