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http://hdl.handle.net/2445/47286
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DC Field | Value | Language |
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dc.contributor.author | Voz Sánchez, Cristóbal | - |
dc.contributor.author | Peiró, D. | - |
dc.contributor.author | Fonrodona Turon, Marta | - |
dc.contributor.author | Soler Vilamitjana, David | - |
dc.contributor.author | Bertomeu i Balagueró, Joan | - |
dc.contributor.author | Andreu i Batallé, Jordi | - |
dc.date.accessioned | 2013-10-25T08:08:51Z | - |
dc.date.available | 2013-10-25T08:08:51Z | - |
dc.date.issued | 2000 | - |
dc.identifier.issn | 0927-0248 | - |
dc.identifier.uri | http://hdl.handle.net/2445/47286 | - |
dc.description.abstract | Undoped hydrogenated microcrystalline silicon was obtained by hot-wire chemical vapour deposition at different silane-to-hydrogen ratios and low temperature (<300 °C). As well as technological aspects of the deposition process, we report structural, optical and electrical characterizations of the samples that were used as the active layer for preliminary p-i-n solar cells. Raman spectroscopy indicates that changing the hydrogen dilution can vary the crystalline fraction. From electrical measurements an unwanted n-type character is deduced for this undoped material. This effect could be due to a contaminant, probably oxygen, which is also observed in capacitance-voltage measurements on Schottky structures. The negative effect of contaminants on the device was dramatic and a compensated p-i-n structure was also deposited to enhance the cell performance. | - |
dc.format.extent | 21 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.relation.isformatof | Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0927-0248(00)00030-1 | - |
dc.relation.ispartof | Solar Energy Materials and Solar Cells, 2000, vol. 63, num. 3, p. 237-246 | - |
dc.relation.uri | http://dx.doi.org/10.1016/S0927-0248(00)00030-1 | - |
dc.rights | (c) Elsevier B.V., 2000 | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Silici | - |
dc.subject.classification | Nanocristalls | - |
dc.subject.classification | Deposició química en fase vapor | - |
dc.subject.classification | Cèl·lules solars | - |
dc.subject.other | Silicon | - |
dc.subject.other | Nanocrystals | - |
dc.subject.other | Chemical vapor deposition | - |
dc.subject.other | Solar cells | - |
dc.title | Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 149171 | - |
dc.date.updated | 2013-10-25T08:08:51Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
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149171.pdf | 110.81 kB | Adobe PDF | View/Open |
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