Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47412
Title: Study of post-deposition contamination in low-temperature deposited polysilicon films
Author: Bertomeu i Balagueró, Joan
Puigdollers i González, Joaquim
Peiró, D.
Cifre, J.
Delgado Nieto, Juan Carlos
Andreu i Batallé, Jordi
Keywords: Hidrogen
Deposició química en fase vapor
Temperatures baixes
Electroquímica
Hydrogen
Chemical vapor deposition
Low temperatures
Electrochemistry
Issue Date: 1996
Publisher: Elsevier B.V.
Abstract: The presence of hydrogen in polysilicon films obtained at low temperatures by hot-wire CVD and the post-deposition oxidation by air-exposure of the films are studied in this paper. The experimental results from several characterization techniques (infrared spectroscopy, X-ray photoelectron spectroscopy, secondary ion mass spectrometry and wavelength dispersive spectroscopy) showed that hydrogen and oxygen are homogeneously distributed at grain boundaries throughout the depth of the films. Hydrogen is introduced during the growth process and its concentration is higher in samples deposited at lower temperatures. Oxygen diffuses along the grain boundaries and binds to silicon atoms, mainly in Si 2O groups.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/0921-5107(95)01300-8
It is part of: Materials Science and Engineering B-Solid State Materials for Advanced Technology, 1996, vol. 36, num. 1-3, p. 96-99
Related resource: http://dx.doi.org/10.1016/0921-5107(95)01300-8
URI: http://hdl.handle.net/2445/47412
ISSN: 0921-5107
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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