Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/47424
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Saboundji, A. | - |
dc.contributor.author | Coulon, N. | - |
dc.contributor.author | Gorin, A. | - |
dc.contributor.author | Lhermite, H. | - |
dc.contributor.author | Mohammed-Brahim, T. | - |
dc.contributor.author | Fonrodona Turon, Marta | - |
dc.contributor.author | Bertomeu i Balagueró, Joan | - |
dc.contributor.author | Andreu i Batallé, Jordi | - |
dc.date.accessioned | 2013-10-31T12:21:25Z | - |
dc.date.available | 2013-10-31T12:21:25Z | - |
dc.date.issued | 2005 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/2445/47424 | - |
dc.description.abstract | N-type as well P-type top-gate microcrystalline silicon thin film transistors (TFTs) are fabricated on glass substrates at a maximum temperature of 200 °C. The active layer is an undoped μc-Si film, 200 nm thick, deposited by Hot-Wire Chemical Vapor. The drain and source regions are highly phosphorus (N-type TFTs) or boron (P-type TFTs)-doped μc-films deposited by HW-CVD. The gate insulator is a silicon dioxide film deposited by RF sputtering. Al-SiO 2-N type c-Si structures using this insulator present low flat-band voltage,-0.2 V, and low density of states at the interface D it=6.4×10 10 eV -1 cm -2. High field effect mobility, 25 cm 2/V s for electrons and 1.1 cm 2/V s for holes, is obtained. These values are very high, particularly the hole mobility that was never reached previously. | - |
dc.format.extent | 6 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.relation.isformatof | Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2005.01.070 | - |
dc.relation.ispartof | Thin Solid Films, 2005, vol. 487, num. 1-2, p. 227-231 | - |
dc.relation.uri | http://dx.doi.org/10.1016/j.tsf.2005.01.070 | - |
dc.rights | (c) Elsevier B.V., 2005 | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Transistors | - |
dc.subject.classification | Semiconductors | - |
dc.subject.classification | Silici | - |
dc.subject.classification | Temperatures baixes | - |
dc.subject.other | Transistors | - |
dc.subject.other | Semiconductors | - |
dc.subject.other | Silicon | - |
dc.subject.other | Low temperatures | - |
dc.title | Top-gate microcrystalline silicon TFTs processed at low temperature (<200ºC) | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 525190 | - |
dc.date.updated | 2013-10-31T12:21:25Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
525190.pdf | 184.54 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.