Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47502
Title: Light induced defects in thermal annealed hydrogenated amorphous silicon
Author: Serra-Miralles, J.
Bertomeu i Balagueró, Joan
Sardin, Georges
Roch i Cunill, Carles
Asensi López, José Miguel
Andreu i Batallé, Jordi
Morenza Gil, José Luis
Keywords: Espectroscòpia
Silici
Espectres d'absorció
Semiconductors amorfs
Semimetalls
Cèl·lules solars
Spectrum analysis
Silicon
Absorption spectra
Amorphous semiconductors
Semimetals
Solar cells
Issue Date: 1992
Publisher: Elsevier B.V.
Abstract: The metastable defects of a-Si:H samples annealed at temperatures in the 300-550°C range have been studied by photothermal deflection spectroscopy (PDS). The light-soaked samples show an increase in optical absorption in the 0.8 to 1.5 eV range. The metastable defect density decreases when the annealing temperature increases, while the defect density increases. This decrease in the metastable defect density shows an almost linear correlation with the decrease in the hydrogen content of the samples, determined by IR transmission spectroscopy and thermal desorption spectroscopy.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/0927-0248(92)90106-Y
It is part of: Solar Energy Materials and Solar Cells, 1992, vol. 28, num. 1, p. 49-57
Related resource: http://dx.doi.org/10.1016/0927-0248(92)90106-Y
URI: http://hdl.handle.net/2445/47502
ISSN: 0927-0248
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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