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http://hdl.handle.net/2445/47502
Title: | Light induced defects in thermal annealed hydrogenated amorphous silicon |
Author: | Serra-Miralles, J. Bertomeu i Balagueró, Joan Sardin, Georges Roch i Cunill, Carles Asensi López, José Miguel Andreu i Batallé, Jordi Morenza Gil, José Luis |
Keywords: | Espectroscòpia Silici Espectres d'absorció Semiconductors amorfs Semimetalls Cèl·lules solars Spectrum analysis Silicon Absorption spectra Amorphous semiconductors Semimetals Solar cells |
Issue Date: | 1992 |
Publisher: | Elsevier B.V. |
Abstract: | The metastable defects of a-Si:H samples annealed at temperatures in the 300-550°C range have been studied by photothermal deflection spectroscopy (PDS). The light-soaked samples show an increase in optical absorption in the 0.8 to 1.5 eV range. The metastable defect density decreases when the annealing temperature increases, while the defect density increases. This decrease in the metastable defect density shows an almost linear correlation with the decrease in the hydrogen content of the samples, determined by IR transmission spectroscopy and thermal desorption spectroscopy. |
Note: | Versió postprint del document publicat a: http://dx.doi.org/10.1016/0927-0248(92)90106-Y |
It is part of: | Solar Energy Materials and Solar Cells, 1992, vol. 28, num. 1, p. 49-57 |
URI: | http://hdl.handle.net/2445/47502 |
Related resource: | http://dx.doi.org/10.1016/0927-0248(92)90106-Y |
ISSN: | 0927-0248 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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