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Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47504
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dc.contributor.authorBertomeu i Balagueró, Joan-
dc.contributor.authorPuigdollers i González, Joaquim-
dc.contributor.authorAsensi López, José Miguel-
dc.contributor.authorAndreu i Batallé, Jordi-
dc.date.accessioned2013-11-05T12:53:27Z-
dc.date.available2013-11-05T12:53:27Z-
dc.date.issued1993-
dc.identifier.issn0022-3093-
dc.identifier.urihttp://hdl.handle.net/2445/47504-
dc.description.abstractThis paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of aSi:H/aSi1-xCx:H multilayers, and a new approach in the treatment of experimental dada is used in order to obtain accurate results. From this approach, an upper limit of 10^10 cm-2 is determined for the interface density of states.-
dc.format.extent6 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.relation.isformatofVersió postprint del document publicat a: http://dx.doi.org/10.1016/0022-3093(93)91133-N-
dc.relation.ispartofJournal of non-Crystalline Solids, 1993, vol. 164-166, num. 2, p. 861-864-
dc.relation.urihttp://dx.doi.org/10.1016/0022-3093(93)91133-N-
dc.rights(c) Elsevier B.V., 1993-
dc.sourceArticles publicats en revistes (Física Aplicada)-
dc.subject.classificationSemiconductors amorfs-
dc.subject.classificationOptoelectrònica-
dc.subject.classificationEspectroscòpia-
dc.subject.classificationSilici-
dc.subject.classificationSemimetalls-
dc.subject.otherAmorphous semiconductors-
dc.subject.otherOptoelectronics-
dc.subject.otherSpectrum analysis-
dc.subject.otherSilicon-
dc.subject.otherSemimetals-
dc.titleOn the determination of the interface density of states in a-Si:H/a-SiC:H multilayers-
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/acceptedVersion-
dc.identifier.idgrec088431-
dc.date.updated2013-11-05T12:53:27Z-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
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