Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/47604
Title: Infrared characterization of a-Si:H/a-Si1-xCx:H interfaces
Author: Bertomeu i Balagueró, Joan
Puigdollers i González, Joaquim
Asensi López, José Miguel
Andreu i Batallé, Jordi
Keywords: Espectroscòpia infraroja
Pel·lícules fines
Hidrogen
Semiconductors amorfs
Porositat
Infrared spectroscopy
Thin films
Hydrogen
Amorphous semiconductors
Porosity
Issue Date: 1997
Publisher: Elsevier B.V.
Abstract: Infrared spectroscopy was used to characterize three series of a-Si:H/a-Si1-xCx:H multilayers in which their geometrical parameters were varied. The infrared active vibrational groups in their spectra and the interference fringes in their absorption-free zone were studied to analyze the interfaces and the changes that are produced in very thin layers. Our results show that hydrogen is bonded to silicon only in monohydride groups. No additional hydrogen could be detected at these interfaces. The deposition of very thin a-Si1-xCx:H layers seems to affect their porous structure, making them denser.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0169-4332(96)00600-9
It is part of: Applied Surface Science, 1997, vol. 108, num. 2, p. 211-217
Related resource: http://dx.doi.org/10.1016/S0169-4332(96)00600-9
URI: http://hdl.handle.net/2445/47604
ISSN: 0169-4332
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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