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http://hdl.handle.net/2445/50483
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DC Field | Value | Language |
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dc.contributor.author | Marsal, A. | - |
dc.contributor.author | Carreras Seguí, Paz | - |
dc.contributor.author | Puigdollers i González, Joaquim | - |
dc.contributor.author | Voz Sánchez, Cristóbal | - |
dc.contributor.author | Galindo, S. | - |
dc.contributor.author | Alcubilla González, Ramón | - |
dc.contributor.author | Bertomeu i Balagueró, Joan | - |
dc.contributor.author | Antony, Aldrin | - |
dc.date.accessioned | 2014-02-21T08:04:30Z | - |
dc.date.available | 2014-02-21T08:04:30Z | - |
dc.date.issued | 2014-03-31 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/2445/50483 | - |
dc.description.abstract | In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies. In thin-film transistors this effect leads to a higher threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the fieldeffect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. | - |
dc.format.extent | 12 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.relation.isformatof | Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2013.08.010 | - |
dc.relation.ispartof | Thin Solid Films, 2014, vol. 555, p. 107-111 | - |
dc.relation.uri | http://dx.doi.org/10.1016/j.tsf.2013.08.010 | - |
dc.rights | (c) Elsevier B.V., 2014 | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Òxids | - |
dc.subject.classification | Pel·lícules fines | - |
dc.subject.classification | Optoelectrònica | - |
dc.subject.classification | Transistors | - |
dc.subject.classification | Mecànica estadística | - |
dc.subject.classification | Circuits integrats | - |
dc.subject.other | Oxides | - |
dc.subject.other | Thin films | - |
dc.subject.other | Optoelectronics | - |
dc.subject.other | Transistors | - |
dc.subject.other | Statistical mechanics | - |
dc.subject.other | Integrated circuits | - |
dc.title | Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 628055 | - |
dc.date.updated | 2014-02-21T08:04:30Z | - |
dc.relation.projectID | info:eu-repo/grantAgreement/EC/FP7/227127/EU//EPHOCELL | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
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628055.pdf | 525.65 kB | Adobe PDF | View/Open |
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