Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/67161
Title: Characterization of linear-mode avalanche photodiodes in standard CMOS
Author: Vilella Figueras, Eva
Vilà i Arbonès, Anna Maria
Palacio, Fernando
López de Miguel, Manuel
Diéguez Barrientos, Àngel
Keywords: Metall-òxid-semiconductors complementaris
Col·lisions (Física nuclear)
Circuits electrònics
Complementary metal oxide semiconductors
Collisions (Nuclear physics)
Electronic circuits
Issue Date: 26-Nov-2014
Publisher: Elsevier
Abstract: Linear-mode Avalanche PhotoDiodes (APDs) can be fabricated in standard CMOS processes for obtaining high multiplication gains that allow to determine the number of incident photons with great precision. This idea can be exploited in several application domains, such as image sensors, optical communications and quantum information. In this work, we present a linear-mode APD fabricated in a 0.35 µm CMOS process and report its noise and gain characterization by means of two different experimental set-ups. Good matching is observed between the results obtained by means of the two different methods.
Note: Reproducció del document publicat a: http://ac.els-cdn.com/S1877705814027556/1-s2.0-S1877705814027556-main.pdf?_tid=198687e8-6369-11e5-a4ea-00000aab0f26&acdnat=1443174055_ae2c94dc43aa0be9
It is part of: Procedia Engineering, 2014, vol. 87, p. 728-731
URI: http://hdl.handle.net/2445/67161
ISSN: 1877-7058
Appears in Collections:Articles publicats en revistes (Electrònica)

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