Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/8692
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dc.contributor.authorLeseduarte Cuevas, Sergiocat
dc.contributor.authorMarco Colás, Santiagocat
dc.contributor.authorBeyne, Ericcat
dc.contributor.authorVan Hoof, Ritacat
dc.contributor.authorMarty, Antoinecat
dc.contributor.authorPinel, Stèphanecat
dc.contributor.authorVendier, Oliviercat
dc.contributor.authorCoello-Vera, Augustíncat
dc.date.accessioned2009-06-17T09:09:54Z-
dc.date.available2009-06-17T09:09:54Z-
dc.date.issued2000ca
dc.identifier.issn1521-3331cat
dc.identifier.urihttp://hdl.handle.net/2445/8692-
dc.description.abstractA new technology for the three-dimensional (3-D) stacking of very thin chips on a substrate is currently under development within the ultrathin chip stacking (UTCS) Esprit Project 24910. In this work, we present the first-level UTCS structure and the analysis of the thermomechanical stresses produced by the manufacturing process. Chips are thinned up to 10 or 15 m. We discuss potentially critical points at the edges of the chips, the suppression of delamination problems of the peripheral dielectric matrix and produce a comparative study of several technological choices for the design of metallic interconnect structures. The purpose of these calculations is to give inputs for the definition of design rules for this technology. We have therefore undertaken a programme that analyzes the influence of sundry design parameters and alternative development options. Numerical analyses are based on the finite element method.ca
dc.format.extent7 p.cat
dc.format.mimetypeapplication/pdfeng
dc.language.isoengeng
dc.publisherIEEEcat
dc.relation.isformatofReproducció del document publicat a http://dx.doi.org/10.1109/6144.888852cat
dc.relation.ispartofIEEE Transactions on Components Packaging and Manufacturing Technology Part A, 2000, vol. 23, núm. 4, p. 673-679.eng
dc.relation.urihttp://dx.doi.org/10.1109/6144.888852-
dc.rights(c) IEEE, 2000cat
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationDelaminationeng
dc.subject.classificationFinite element analysiseng
dc.subject.classificationIntegrated circuit designeng
dc.subject.classificationIntegrated circuit interconnectionseng
dc.subject.classificationIntegrated circuit packagingeng
dc.subject.classificationThermal stresseseng
dc.subject.classificationCircuits integralscat
dc.titleResidual thermomechanical stresses in thinned-chip assemblieseng
dc.typeinfo:eu-repo/semantics/articlecat
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec154101cat
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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