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http://hdl.handle.net/2445/8722
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DC Field | Value | Language |
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dc.contributor.author | Blanchard, Roxann R. | cat |
dc.contributor.author | Alamo, Jesús A. del | cat |
dc.contributor.author | Adams, Stephen B. | cat |
dc.contributor.author | Chao, P. C. | cat |
dc.contributor.author | Cornet i Calveras, Albert | cat |
dc.date.accessioned | 2009-06-18T08:26:09Z | - |
dc.date.available | 2009-06-18T08:26:09Z | - |
dc.date.issued | 1999 | cat |
dc.identifier.issn | 0741-3106 | cat |
dc.identifier.uri | http://hdl.handle.net/2445/8722 | - |
dc.description.abstract | In this letter, we have investigated hydrogen degradation of InP HEMT's with Ti/Pt/Au gates. We have found that V/sub T/ shifts negative after exposure to hydrogen, and exhibits an L/sub G/ and orientation dependence. We postulate that /spl Delta/V/sub T/ is at least in part due to the piezoelectric effect. Hydrogen exposure leads to the formation of TiH/sub x/, producing compressive stress in the gate. This stress induces a piezoelectric charge distribution in the semiconductor that shifts the threshold voltage. We have independently confirmed TiH/sub x/ formation under our experimental conditions through Auger measurements. Separate radius-of-curvature measurements have also independently confirmed that Ti/Pt films become compressively stressed relative to their initial state after H/sub 2/ exposure. | - |
dc.format.extent | 3 p. | cat |
dc.format.mimetype | application/pdf | eng |
dc.language.iso | eng | eng |
dc.publisher | IEEE | cat |
dc.relation.isformatof | Reproducció del document publicat a http://dx.doi.org/10.1109/55.778153 | cat |
dc.relation.ispartof | IEEE Electron Device Letters, 1999, vol. 20, núm. 8, p. 393-395. | eng |
dc.relation.uri | http://dx.doi.org/10.1109/55.778153 | - |
dc.rights | (c) IEEE, 1999 | cat |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Piroelectricitat i piezoelectricitat | cat |
dc.subject.classification | Hidrogenació | cat |
dc.subject.other | Hydrogenation | eng |
dc.subject.other | Piezoelectricity | eng |
dc.subject.other | Semiconductor device | eng |
dc.subject.other | InP HEMT's | eng |
dc.title | Hydrogen-induced piezoelectric effects in InP HEMT's | eng |
dc.type | info:eu-repo/semantics/article | cat |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 170676 | cat |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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170676.pdf | 54.23 kB | Adobe PDF | View/Open |
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