Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/8757
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dc.contributor.authorDaldosso, Nicola-
dc.contributor.authorNavarro Urrios, Daniel-
dc.contributor.authorMelchiorri, Mirko-
dc.contributor.authorGarcía Favrot, Cristina-
dc.contributor.authorPellegrino, Paolo-
dc.contributor.authorGarrido Fernández, Blas-
dc.contributor.authorSada, Cinzia-
dc.contributor.authorBattaglin, Giancarlo-
dc.contributor.authorGourbilleau, Fabrice-
dc.contributor.authorRizk, Richard-
dc.contributor.authorPavesi, Lorenzo-
dc.date.accessioned2009-06-19T08:11:32Z-
dc.date.available2009-06-19T08:11:32Z-
dc.date.issued2006cat
dc.identifier.issn1077-260X-
dc.identifier.urihttp://hdl.handle.net/2445/8757-
dc.description.abstractRib-loaded waveguides containing Er3+-coupled Si nanoclusters (Si-nc) have been produced to observe optical gain at 1535 nm. The presence ofSi-nc strongly improves the efficiency ofEr 3+ excitation but may introduce optical loss mechanisms, such as Mie scattering and confined carrier absorption. Losses strongly affect the possibility of obtaining positive optical gain. Si-nc-related losses have been minimized to 1 dB/cm by lowering the annealing time ofthe Er3+-doped silicon-rich oxide deposited by reactive magnetron cosputtering. Photoluminescence (PL) and lifetime measurements show that all Er3+ ions are optically active while those that can be excited at high pump rates via Si-nc are only a small percentage. Er3+ absorption cross section is found comparable to that ofEr 3+ in SiO 2.However, dependence on the effective refractive index has been found. In pump-probe measurements, it is shown how the detrimental role ofconfined carrier absorption can be attenuated by reducing the annealing time. A maximum signal enhancement ofabout 1.34 at 1535 nm was measured.eng
dc.format.extent11 p.cat
dc.format.mimetypeapplication/pdfeng
dc.language.isoengeng
dc.publisherIEEEcat
dc.relation.isformatofReproducció del document publicat a http://dx.doi.org/10.1109/JSTQE.2006.885141cat
dc.relation.ispartofIEEE Journal of Selected Topics in Quantum Electronics, 2006, vol. 12, núm. 6 (Part 2), p. 1607-1617cat
dc.relation.urihttp://dx.doi.org/10.1109/JSTQE.2006.885141-
dc.rights(c) IEEE, 2006cat
dc.subject.classificationGuies d'onescat
dc.subject.classificationMaterials nanoestructuratscat
dc.subject.otherEr amplifiereng
dc.subject.otherSi nanoclustereng
dc.subject.otherSilicon photonicseng
dc.subject.otherWave guideseng
dc.titleEr-Coupled Si Nanocluster Waveguideeng
dc.typeinfo:eu-repo/semantics/articleeng
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec553549cat
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Electrònica)

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