Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/8757
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Daldosso, Nicola | - |
dc.contributor.author | Navarro Urrios, Daniel | - |
dc.contributor.author | Melchiorri, Mirko | - |
dc.contributor.author | García Favrot, Cristina | - |
dc.contributor.author | Pellegrino, Paolo | - |
dc.contributor.author | Garrido Fernández, Blas | - |
dc.contributor.author | Sada, Cinzia | - |
dc.contributor.author | Battaglin, Giancarlo | - |
dc.contributor.author | Gourbilleau, Fabrice | - |
dc.contributor.author | Rizk, Richard | - |
dc.contributor.author | Pavesi, Lorenzo | - |
dc.date.accessioned | 2009-06-19T08:11:32Z | - |
dc.date.available | 2009-06-19T08:11:32Z | - |
dc.date.issued | 2006 | cat |
dc.identifier.issn | 1077-260X | - |
dc.identifier.uri | http://hdl.handle.net/2445/8757 | - |
dc.description.abstract | Rib-loaded waveguides containing Er3+-coupled Si nanoclusters (Si-nc) have been produced to observe optical gain at 1535 nm. The presence ofSi-nc strongly improves the efficiency ofEr 3+ excitation but may introduce optical loss mechanisms, such as Mie scattering and confined carrier absorption. Losses strongly affect the possibility of obtaining positive optical gain. Si-nc-related losses have been minimized to 1 dB/cm by lowering the annealing time ofthe Er3+-doped silicon-rich oxide deposited by reactive magnetron cosputtering. Photoluminescence (PL) and lifetime measurements show that all Er3+ ions are optically active while those that can be excited at high pump rates via Si-nc are only a small percentage. Er3+ absorption cross section is found comparable to that ofEr 3+ in SiO 2.However, dependence on the effective refractive index has been found. In pump-probe measurements, it is shown how the detrimental role ofconfined carrier absorption can be attenuated by reducing the annealing time. A maximum signal enhancement ofabout 1.34 at 1535 nm was measured. | eng |
dc.format.extent | 11 p. | cat |
dc.format.mimetype | application/pdf | eng |
dc.language.iso | eng | eng |
dc.publisher | IEEE | cat |
dc.relation.isformatof | Reproducció del document publicat a http://dx.doi.org/10.1109/JSTQE.2006.885141 | cat |
dc.relation.ispartof | IEEE Journal of Selected Topics in Quantum Electronics, 2006, vol. 12, núm. 6 (Part 2), p. 1607-1617 | cat |
dc.relation.uri | http://dx.doi.org/10.1109/JSTQE.2006.885141 | - |
dc.rights | (c) IEEE, 2006 | cat |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Guies d'ones | cat |
dc.subject.classification | Materials nanoestructurats | cat |
dc.subject.other | Er amplifier | eng |
dc.subject.other | Si nanocluster | eng |
dc.subject.other | Silicon photonics | eng |
dc.subject.other | Wave guides | eng |
dc.title | Er-Coupled Si Nanocluster Waveguide | eng |
dc.type | info:eu-repo/semantics/article | eng |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 553549 | cat |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
553549.pdf | 735.46 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.