Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/8759
Title: Residual Stress Measurement on a MEMS Structure With High-Spatial Resolution
Author: Sabaté Vizcarra, Neus
Vogel, Dietmar
Gollhardt, Astrid
Keller, Jürgen
Cané i Ballart, Carles
Gràcia Tortadés, Isabel
Morante i Lleonart, Joan Ramon
Michel, Bernd
Keywords: Sistemes microelectromecànics
Assaigs de materials
Focused ion beam technology
Internal stresses
Materials testing
Micromechanical devices
Stress measurement
Issue Date: 2007
Publisher: IEEE
Abstract: A new approach to the local measurement of residual stress in microstructures is described in this paper. The presented technique takes advantage of the combined milling-imaging features of a focused ion beam (FIB) equipment to scale down the widely known hole drilling method. This method consists of drilling a small hole in a solid with inherent residual stresses and measuring the strains/displacements caused by the local stress release, that takes place around the hole. In the presented case, the displacements caused by the milling are determined by applying digital image correlation (DIC) techniques to high resolution micrographs taken before and after the milling process. The residual stress value is then obtained by fitting the measured displacements to the analytical solution of the displacement fields. The feasibility of this approach has been demonstrated on a micromachined silicon nitride membrane showing that this method has high potential for applications in the field of mechanical characterization of micro/nanoelectromechanical systems.
Note: Reproducció del document publicat a http://dx.doi.org/10.1109/JMEMS.2006.879701
It is part of: Journal of Microelectromechanical Systems, 2007, vol. 16, núm. 2, p. 365-372.
URI: http://hdl.handle.net/2445/8759
ISSN: 1057-7157
Appears in Collections:Articles publicats en revistes (Electrònica)

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