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Issue DateTitleAuthor(s)
2003Ground- and excited-state properties of M-center oxygen vacancy aggregates in the bulk and the surface of MgODomínguez-Ariza, David; Sousa Romero, Carmen; Illas i Riera, Francesc; Ricci, Davide; Pacchioni, Gianfranco
2002Rigorous characterization of oxygen vacancies in ionic oxidesMori-Sánchez, P.; Recio, J. M.; Silvi, B.; Sousa Romero, Carmen; Martín Pendás, A.; Luaña, Víctor; Illas i Riera, Francesc
2004When Langmuir is too simple: H2 dissociation on Pd(111) at high coverageLópez, Núria (López Alonso); Lodziana, Zbigniew; Illas i Riera, Francesc; Salmeron, Miquel
2004Theoretical modeling of photon and electron-stimulated Na and K desorption from SiO2Domínguez-Ariza, David; López, Núria (López Alonso); Illas i Riera, Francesc; Pacchioni, Gianfranco; Madey, Theodore E.
1995Nature of bonding of alkali metals to Si(111)Clotet, A.; Ricart, Josep M.; Rubio Martínez, Jaime; Illas i Riera, Francesc
1990Chemisorption of group-III metals on the Si(111) and Ge(111) surfaces: An ab initio studyRicart, Josep M.; Rubio Martínez, Jaime; Illas i Riera, Francesc
1986Nonempirical cluster-model study of the chemisorption of atomic hydrogen on the (111) surface of diamondlike crystalsBarone, Vincenzo; Lelj, Francesco; Russo, Nino; Toscano, Marirosa; Illas i Riera, Francesc; Rubio Martínez, Jaime
1988Chemisorption of atomic aluminum on Si(111): Evidence for an adsorbate-induced relaxation based on ab initio cluster-model calculationsRubio Martínez, Jaime; Illas i Riera, Francesc; Ricart, Josep M.
1985Ab initio cluster-model study of the on-top chemisorption of F and Cl on Si(111) and Ge(111) surfacesIllas i Riera, Francesc; Rubio Martínez, Jaime; Ricart, Josep M.
1993Evidence for two different bonding mechanisms of Al on Si(111)Illas i Riera, Francesc; Ricart, Josep M.; Rubio Martínez, Jaime; Casanovas Salas, Jordi