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http://hdl.handle.net/2445/98045
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DC Field | Value | Language |
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dc.contributor.author | Kail, F. | - |
dc.contributor.author | Farjas Silva, Jordi | - |
dc.contributor.author | Roura Grabulosa, Pere | - |
dc.contributor.author | Secouard, C. | - |
dc.contributor.author | Nos Aguilà, Oriol | - |
dc.contributor.author | Bertomeu i Balagueró, Joan | - |
dc.contributor.author | Roca i Cabarrocas, P. (Pere) | - |
dc.date.accessioned | 2016-04-29T10:22:46Z | - |
dc.date.available | 2016-04-29T10:22:46Z | - |
dc.date.issued | 2011-09-19 | - |
dc.identifier.issn | 1862-6254 | - |
dc.identifier.uri | http://hdl.handle.net/2445/98045 | - |
dc.description.abstract | The crystallization enthalpy of pure amorphous silicon (a-Si) and hydrogenated a-Si was measured by differential scanning calorimetry (DSC) for a large set of materials deposited from the vapour phase by different techniques. Although the values cover a wide range (200-480 J/g), the minimum value is common to all the deposition techniques used and close to the predicted minimum strain energy of relaxed a-Si (240 ± 25 J/g). This result gives a reliable value for the configurational energy gap between a-Si and crystalline silicon. An excess of enthalpy above this minimum value can be ascribed to coordination defects. | - |
dc.format.extent | 6 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Wiley-VCH | - |
dc.relation.isformatof | Versió postprint del document publicat a: http://dx.doi.org/10.1002/pssr.201105333 | - |
dc.relation.ispartof | physica status solidi (RRL) - Rapid Research Letters, 2011, vol. 5, num. 10-11, p. 361-363 | - |
dc.relation.uri | http://dx.doi.org/10.1002/pssr.201105333 | - |
dc.rights | (c) Wiley-VCH, 2011 | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Silici | - |
dc.subject.classification | Cristal·lització | - |
dc.subject.classification | Entalpia | - |
dc.subject.classification | Calorimetria | - |
dc.subject.other | Silicon | - |
dc.subject.other | Crystallization | - |
dc.subject.other | Enthalpy | - |
dc.subject.other | Calorimetry | - |
dc.title | The configurational energy gap between amorphous and crystalline silicon | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 599025 | - |
dc.date.updated | 2016-04-29T10:22:51Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
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599025.pdf | 295.7 kB | Adobe PDF | View/Open |
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