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http://hdl.handle.net/2445/98399
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DC Field | Value | Language |
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dc.contributor.author | Breymesser, A. | - |
dc.contributor.author | Schlosser, V. | - |
dc.contributor.author | Peiró, D. | - |
dc.contributor.author | Voz Sánchez, Cristóbal | - |
dc.contributor.author | Bertomeu i Balagueró, Joan | - |
dc.contributor.author | Andreu i Batallé, Jordi | - |
dc.contributor.author | Summhammer, J. | - |
dc.date.accessioned | 2016-05-06T14:58:42Z | - |
dc.date.available | 2016-05-06T14:58:42Z | - |
dc.date.issued | 2001 | - |
dc.identifier.issn | 0927-0248 | - |
dc.identifier.uri | http://hdl.handle.net/2445/98399 | - |
dc.description.abstract | Work function measurements on cross-sectioned microcrystalline pin silicon solar cells deposited by Hot-Wire CVD are presented. The experiment is realized by combining a modified Kelvin probe experiment and a scanning force microscope. The measured surface potential revealed that the built-in electric drift field is weak in the middle of the compensated intrinsic layer. A graded donor distribution and a constant boron compensation have to be assumed within the intrinsic layer in order to obtain coincidence of the measurements and simulations. The microcrystalline p-silicon layer and the n-type transparent conducting oxide form a reverse polarized diode in series with the pin diode. | - |
dc.format.extent | 7 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.relation.isformatof | Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0927-0248(00)00170-7 | - |
dc.relation.ispartof | Solar Energy Materials and Solar Cells, 2001, vol. 66, num. 1-4, p. 171-177 | - |
dc.relation.uri | http://dx.doi.org/10.1016/S0927-0248(00)00170-7 | - |
dc.rights | (c) Elsevier B.V., 2001 | - |
dc.source | Articles publicats en revistes (Física Aplicada) | - |
dc.subject.classification | Silici | - |
dc.subject.classification | Deposició química en fase vapor | - |
dc.subject.classification | Cèl·lules solars | - |
dc.subject.other | Silicon | - |
dc.subject.other | Chemical vapor deposition | - |
dc.subject.other | Solar cells | - |
dc.title | Kelvin probe measurements of microcrystalline silicon on a nanometer scale using SFM | - |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/acceptedVersion | - |
dc.identifier.idgrec | 147810 | - |
dc.date.updated | 2016-05-06T14:58:48Z | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
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147810.pdf | 574.7 kB | Adobe PDF | View/Open |
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