Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/98451
Title: Hydrogen related effects in a-Si:H studied by photothermal deflection spectroscopy
Author: Serra-Miralles, J.
Andreu i Batallé, Jordi
Sardin, Georges
Roch i Cunill, Carles
Asensi López, José Miguel
Bertomeu i Balagueró, Joan
Esteve Pujol, Joan
Keywords: Espectroscòpia
Silici
Física de l'estat sòlid
Semiconductors
Spectrum analysis
Silicon
Solid state physics
Semiconductors
Issue Date: 1991
Publisher: Elsevier B.V.
Abstract: A study of thermal annealing of a-Si:H samples between 300 and 600°C has been carried out. At increasing annealing temperatures, the sub-gap absorption measured by PDS increases showing two inflections, centered at 375 and 550°C. The hydrogen content measured by thermal desorption spectroscopy evolves in the same temperature range, whereas the evolution of the hydrogen content deduced from the IR transmission spectra differs, decreasing sooner and vanishing already at about 450°C.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/0921-4526(91)90136-3
It is part of: Physica B, 1991, vol. 170, num. 1-4, p. 269-272
Related resource: http://dx.doi.org/10.1016/0921-4526(91)90136-3
URI: http://hdl.handle.net/2445/98451
ISSN: 0921-4526
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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