Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/9848
Full metadata record
DC FieldValueLanguage
dc.contributor.authorRoura Grabulosa, Perecat
dc.contributor.authorBosch Estrada, Josécat
dc.contributor.authorMorante i Lleonart, Joan Ramoncat
dc.date.accessioned2009-10-28T09:30:21Z-
dc.date.available2009-10-28T09:30:21Z-
dc.date.issued1992cat
dc.identifier.issn0163-1829cat
dc.identifier.urihttp://hdl.handle.net/2445/9848-
dc.description.abstractOptical-absorption measurements have been carried out on tensile and compressive In x Ga 1 − x As/InP strained layers. It is shown that the energetic dispersion of the heavy-hole relative to the light-hole subband σ HH / σ LH is the key to knowing the origin of the microscopic inhomogeneities. So, σ HH / σ LH <1 indicates the existence of composition inhomogeneities whereas σ HH / σ LH =2.8 reveals an inhomogeneous strain field.-
dc.format.extent4 p.cat
dc.format.mimetypeapplication/pdfeng
dc.language.isoengeng
dc.publisherThe American Physical Societyeng
dc.relation.isformatofReproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.46.10453cat
dc.relation.ispartofPhysical Review B, 1992, vol. 46, núm. 16, p. 10453-10456.eng
dc.relation.urihttp://dx.doi.org/10.1103/PhysRevB.46.10453-
dc.rights(c) The American Physical Society, 1992eng
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationElectrònica de l'estat sòlidcat
dc.subject.classificationPropietats òptiquescat
dc.subject.classificationLuminescènciacat
dc.subject.classificationSemiconductorscat
dc.subject.classificationMicroscòpia electrònica de transmissiócat
dc.subject.otherSolid state electronicseng
dc.subject.otherOptical propertieseng
dc.subject.otherPhotoluminescence-
dc.subject.otherSemiconductorseng
dc.subject.otherTransmission electron microscopyeng
dc.titleComposition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layerseng
dc.typeinfo:eu-repo/semantics/articleeng
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec71200cat
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

Files in This Item:
File Description SizeFormat 
71200.pdf566.99 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.