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Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/9849
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dc.contributor.authorRoura Grabulosa, Perecat
dc.contributor.authorBenyattou, T.cat
dc.contributor.authorGuillot, G.cat
dc.contributor.authorMoncorge, R.cat
dc.contributor.authorUlrici, W.cat
dc.date.accessioned2009-10-28T09:32:00Z-
dc.date.available2009-10-28T09:32:00Z-
dc.date.issued1992cat
dc.identifier.issn0163-1829cat
dc.identifier.urihttp://hdl.handle.net/2445/9849-
dc.description.abstractThe time dependence of the 2 T 2 → 2 E photoluminescence transition of Ti 3 + Ga in GaP has been measured on semi-insulating, p-type conducting, and n-type conducting samples. A decay time τ 0 =2.0 μs was obtained at T=10 K. The temperature dependence of the decay time in the conducting samples is found to be affected by the capture of free carriers by Ti 3 + Ga in the excited state whereas the results on p-type conducting samples suggest hole localization at the Ti 3 + Ga .-
dc.format.extent4 p.cat
dc.format.mimetypeapplication/pdfeng
dc.language.isoengeng
dc.publisherThe American Physical Societyeng
dc.relation.isformatofReproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.45.11698cat
dc.relation.ispartofPhysical Review B, 1992, vol. 45, núm. 20, p. 11698-11701.eng
dc.relation.urihttp://dx.doi.org/10.1103/PhysRevB.45.11698-
dc.rights(c) The American Physical Society, 1992eng
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationLuminescènciacat
dc.subject.classificationSemiconductorscat
dc.subject.otherPhotoluminescenceeng
dc.subject.otherSemiconductorseng
dc.titleTime-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaPeng
dc.typeinfo:eu-repo/semantics/articleeng
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec71766cat
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
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