Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/9851
Title: Equilibrium and nonequilibrium gap-state distribution in amorphous silicon
Author: Asensi López, José Miguel
Andreu i Batallé, Jordi
Keywords: Conductivitat elèctrica
Propietats tèrmiques
Semiconductors amorfs
Electric conductivity
Thermal properties
Amorphous semiconductors
Issue Date: 1993
Publisher: The American Physical Society
Abstract: A general and straightforward analytical expression for the defect-state-energy distribution of a-Si:H is obtained through a statistical-mechanical treatment of the hydrogen occupation for different sites. Broadening of available defect energy levels (defect pool) and their charge state, both in electronic equilibrium and nonequilibrium steady-state situations, are considered. The model gives quantitative results that reproduce different defect phenomena, such as the thermally activated spin density, the gap-state dependence on the Fermi level, and the intensity and temperature dependence of light-induced spin density. An interpretation of the Staebler-Wronski effect is proposed, based on the ''conversion'' of shallow charged centers to neutrals near the middle of the gap as a consequence of hydrogen redistribution.
Note: Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.47.13295
It is part of: Physical Review B, 1993, vol. 47, núm. 20, p. 13295-13303.
URI: http://hdl.handle.net/2445/9851
ISSN: 0163-1829
Appears in Collections:Articles publicats en revistes (Física Aplicada)

Files in This Item:
File Description SizeFormat 
73518.pdf1.48 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.