Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/9871
Title: Configurational statistical model for the damaged structure of silicon oxide after ion implantation
Author: Garrido Beltrán, Lluís
Samitier i Martí, Josep
Morante i Lleonart, Joan Ramon
Montserrat i Martí, Josep
Domínguez, Carlos (Domínguez Horna)
Keywords: Efecte de les radiacions sobre els materials
Fotoemissió
Espectroscòpia de fotoelectrons
Effect of radiation on materials
Photoemission
Photoelectron spectroscopy
Issue Date: 1994
Publisher: The American Physical Society
Abstract: A configurational model for silicon oxide damaged after a high-dose ion implantation of a nonreactive species is presented. Based on statistics of silicon-centered tetrahedra, the model takes into account not only the closest environment of a given silicon atom, but also the second neighborhood, so it is specified whether the oxygen attached to one given silicon is bridging two tetrahedra or not. The frequencies and intensities of infrared vibrational bands have been calculated by averaging over the distributions and these results are in agreement with the ones obtained from infrared experimental spectra. Likewise, the chemical shifts obtained from x-ray photoelectron spectroscopy (XPS) analysis are similar to the reported values for the charge-transfer model of SiOx compounds.
Note: Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.49.14845
It is part of: Physical Review B, 1994, vol. 49, núm. 21, p. 14845-14849.
URI: http://hdl.handle.net/2445/9871
ISSN: 0163-1829
Appears in Collections:Articles publicats en revistes (Electrònica)

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