Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/98752
Title: Elastic tunneling charge transport mechanisms in silicon quantum dots / SiO2 thin films and superlattices
Author: Illera Robles, Sergio
Prades García, Juan Daniel
Cirera Hernández, Albert
Keywords: Semiconductors
Teoria quàntica
Nanocristalls
Silici
Semiconductors
Quantum theory
Nanocrystals
Silicon
Issue Date: 23-Apr-2015
Publisher: American Institute of Physics
Abstract: The role of different charge transport mechanisms in Si /SiO2 structures has been studied. A theoretical model based on the Transfer Hamiltonian Formalism has been developed to explain experimental current trends in terms of three different elastic tunneling processes: (1) trap assisted tunneling; (2) transport through an intermediate quantum dot; and (3) direct tunneling between leads. In general, at low fields carrier transport is dominated by the quantum dots whereas, for moderate and high fields, transport through deep traps inherent to the SiO 2 is the most relevant process. Besides, current trends in Si /SiO2 superlattice structure have been properly reproduced.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.4919747
It is part of: Journal of Applied Physics, 2015, vol. 117, num. 17, p. 174307
Related resource: http://dx.doi.org/10.1063/1.4919747
URI: http://hdl.handle.net/2445/98752
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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