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http://hdl.handle.net/2445/98753
Title: | Polycrystalline silicon films obtained by hot-wire chemical vapour deposition |
Author: | Cifre, J. Bertomeu i Balagueró, Joan Puigdollers i González, Joaquim Polo Trasancos, Ma. del Carmen Andreu i Batallé, Jordi Lloret, A. |
Keywords: | Pel·lícules fines Silici Deposició en fase de vapor Thin films Silicon Vapor-plating |
Issue Date: | 1994 |
Publisher: | Springer Verlag |
Abstract: | Silicon films were deposited at moderate substrate temperatures (280-500° C) from pure silane and a silane-hydrogen mixture (10% SiH 4, 90% H 2) in a hotwire CVD reactor. The morphology, structure and composition of the samples were studied with scanning electron microscopy, transmission electron microscopy, transmission electron diffraction, X-ray diffraction, Raman spectroscopy and secondary ion mass spectrometry. The sample deposited at 500° C with pure silane has an amorphous structure, whereas the samples obtained from silane diluted in hydrogen have a polycrystalline structure, even that grown at the lowest temperature (280° C). Polycrystalline samples have a columnar structure with 0.3-1 ?m crystallite sizes with preferential orientation in [220] direction. Deposition rates depend on the filament-substrate distance and range from 9.5 to 37 Å/s for the polycrystalline samples. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. Moreover, it is expected to be easily scaled up for applications to large-area optoelectronic devices and to photovoltaic solar cells. |
Note: | Versió postprint del document publicat a: http://dx.doi.org/10.1007/BF00331926 |
It is part of: | Applied Physics A: Materials Science and Processing , 1994, vol. 59, num. 6, p. 645-651 |
URI: | http://hdl.handle.net/2445/98753 |
Related resource: | http://dx.doi.org/10.1007/BF00331926 |
ISSN: | 0947-8396 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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