Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/98753
Title: Polycrystalline silicon films obtained by hot-wire chemical vapour deposition
Author: Cifre, J.
Bertomeu i Balagueró, Joan
Puigdollers i González, Joaquim
Polo Trasancos, Ma. del Carmen
Andreu i Batallé, Jordi
Lloret, A.
Keywords: Pel·lícules fines
Silici
Deposició en fase de vapor
Thin films
Silicon
Vapor-plating
Issue Date: 1994
Publisher: Springer Verlag
Abstract: Silicon films were deposited at moderate substrate temperatures (280-500° C) from pure silane and a silane-hydrogen mixture (10% SiH 4, 90% H 2) in a hotwire CVD reactor. The morphology, structure and composition of the samples were studied with scanning electron microscopy, transmission electron microscopy, transmission electron diffraction, X-ray diffraction, Raman spectroscopy and secondary ion mass spectrometry. The sample deposited at 500° C with pure silane has an amorphous structure, whereas the samples obtained from silane diluted in hydrogen have a polycrystalline structure, even that grown at the lowest temperature (280° C). Polycrystalline samples have a columnar structure with 0.3-1 ?m crystallite sizes with preferential orientation in [220] direction. Deposition rates depend on the filament-substrate distance and range from 9.5 to 37 Å/s for the polycrystalline samples. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. Moreover, it is expected to be easily scaled up for applications to large-area optoelectronic devices and to photovoltaic solar cells.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1007/BF00331926
It is part of: Applied Physics A: Materials Science and Processing , 1994, vol. 59, num. 6, p. 645-651
Related resource: http://dx.doi.org/10.1007/BF00331926
URI: http://hdl.handle.net/2445/98753
ISSN: 0947-8396
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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