Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/98758
Title: P-doped polycrystalline silicon films obtained at low temperature by hot-wire chemical vapor deposition
Author: Puigdollers i González, Joaquim
Cifre, J.
Polo Trasancos, Ma. del Carmen
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Lloret, A.
Keywords: Deposició química en fase vapor
Pel·lícules fines
Silici
Chemical vapor deposition
Thin films
Silicon
Issue Date: 1995
Publisher: Elsevier B.V.
Abstract: P-doped polycrystalline silicon films were deposited over Corning 7059 substrates at a moderate temperature, 330°C, in a hot-wire reactor. The films were obtained from the decomposition of silane and hydrogen (10% SiH 4, 90% H 2) and different amounts of diborane. The structure and morphology of the samples were studied with X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM). X-ray diffraction spectra show sharp diffraction peaks corresponding to silicon reflections, and Raman spectra show no evidence of amorphous phases and present a high intensity and narrow peak at 520 cm -1, which is the typical feature of crystalline silicon structure. The efficiency of boron incorporation was studied by secondary ion mass spectrometry (SIMS). The electrical properties of doped samples were also studied.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1016/0169-4332(94)00420-X
It is part of: Applied Surface Science, 1995, vol. 86, num. 1-4, p. 600-603
Related resource: http://dx.doi.org/10.1016/0169-4332(94)00420-X
URI: http://hdl.handle.net/2445/98758
ISSN: 0169-4332
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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