Please use this identifier to cite or link to this item:
Title: A transfer Hamiltonian model for devices based on quantum dot arrays
Author: Illera Robles, Sergio
Prades García, Juan Daniel
Cirera Hernández, Albert
Cornet i Calveras, Albert
Keywords: Sistemes hamiltonians
Transport d'electrons
Teoria quàntica
Hamiltonian systems
Electron transport
Quantum theory
Issue Date: 25-Mar-2015
Publisher: Hindawi Publishing Corporation
Abstract: We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of noncoherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes is introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents, and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime. While the description of the theoretical framework is kept as general as possible, two specific prototypical devices, an arbitrary array of quantum dots embedded in a matrix insulator and a transistor device based on quantum dots, are used to illustrate the kind of unique insight that numerical simulations based on the theory are able to provide.
Note: Reproducció del document publicat a:
It is part of: Scientific World Journal, 2015, vol. 2015
Related resource:
ISSN: 1537-744X
Appears in Collections:Articles publicats en revistes (Electrònica)

Files in This Item:
File Description SizeFormat 
649638.pdf648.48 kBAdobe PDFView/Open

This item is licensed under a Creative Commons License Creative Commons