Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/99712
Title: Active gating as a method to inhibit the crosstalk of Single Photon Avalanche Diodes in a shared well
Author: Vilà i Arbonès, Anna Maria
Vilella Figueras, Eva
Montiel, Andreu
Alonso Casanovas, Oscar
Diéguez Barrientos, Àngel
Keywords: Metall-òxid-semiconductors complementaris
Soroll electrònic
Col·lisions (Física nuclear)
Circuits electrònics
Complementary metal oxide semiconductors
Electronic noise
Collisions (Nuclear physics)
Electronic circuits
Issue Date: 2014
Publisher: Society of Photo-Optical Instrumentation Engineers (SPIE)
Abstract: This work presents low noise readout circuits for silicon pixel detectors based on Geiger mode avalanche photodiodes. Geiger mode avalanche photodiodes offer a high intrinsic gain as well as an excellent timing accuracy. In addition, they can be compatible with standard CMOS technologies. However, they suffer from a high intrinsic noise, which induces false counts indistinguishable from real events and represents an increase of the readout electronics area to store the false counts. We have developed new front-end electronic circuitry for Geiger mode avalanche photodiodes in a conventional 0.35 µm HV-CMOS technology based on a gated mode of operation that allows low noise operation. The performance of the pixel detector is triggered and synchronized with the particle beam thanks to the gated acquisition. The circuits allow low reverse bias overvoltage operation which also improves the noise figures. Experimental characterization of the fabricated front-end circuit is presented in this work.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1117/12.2024212
It is part of: Proceedings of the Society of Photo-Optical Instrumentation Engineers, 2014, vol. 8847, p. 88470S-1-88470S-6
Related resource: http://dx.doi.org/10.1117/12.2024212
URI: http://hdl.handle.net/2445/99712
ISSN: 0277-786X
Appears in Collections:Articles publicats en revistes (Electrònica)

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