Browsing by Author Andreu i Batallé, Jordi
Showing results 46 to 59 of 59
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| Issue Date | Title | Author(s) |
|---|---|---|
| 2003 | Shutterless deposition of phosphorous doped microcrystalline silicon by Cat-CVD | Fonrodona Turon, Marta; Gordijn, A.; Van Veen, M. K.; Van der Werf, C. H. M.; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Schropp, Ruud E. I., 1959- |
| Jul-2016 | Sistemes fotovoltaics en vies de transport rodat. Estudi de la capacitat de producció en dos municipis de Lleida | Balle Llabrés, Francisca |
| 2006 | Spectral analysis of the angular distribution function of back reflectors for thin film silicon solar cells | Escarré i Palou, Jordi; Villar, Fernando; Asensi López, José Miguel; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |
| 2001 | Stability of hydrogenated nanocrystalline silicon thin-film transistors | Orpella, Albert; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Dosev, D.; Fonrodona Turon, Marta; Soler Vilamitjana, David; Bertomeu i Balagueró, Joan; Asensi López, José Miguel; Andreu i Batallé, Jordi; Alcubilla González, Ramón |
| 1997 | Stress measurements in polycrystalline silicon films grown by hot-wire chemical vapor deposition | Peiró, D.; Bertomeu i Balagueró, Joan; Arrando Comas, Francesc; Andreu i Batallé, Jordi |
| 1993 | Structure of a-Si:H/a-Si1-xCx:H multilayers deposited in a reactor with automated substrate holder | Bertomeu i Balagueró, Joan; Asensi López, José Miguel; Puigdollers i González, Joaquim; Andreu i Batallé, Jordi; Morenza Gil, José Luis |
| 2002 | Studies on grain boundaries in nanocrystalline silicon grown by Hot-Wire CVD | Fonrodona Turon, Marta; Soler Vilamitjana, David; Asensi López, José Miguel; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |
| 12-Mar-2010 | Study of Organic Semiconductors for Device Applications | Stella, Marco |
| 1996 | Study of post-deposition contamination in low-temperature deposited polysilicon films | Bertomeu i Balagueró, Joan; Puigdollers i González, Joaquim; Peiró, D.; Cifre, J.; Delgado Nieto, Juan Carlos; Andreu i Batallé, Jordi |
| 2003 | Substrate influence on the properties of doped thin silicon layers grown by Cat-CVD | Soler Vilamitjana, David; Fonrodona Turon, Marta; Voz Sánchez, Cristóbal; Asensi López, José Miguel; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |
| 2003 | Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films | Voz Sánchez, Cristóbal; Martin Garcia, Isidro; Orpella, Albert; Puigdollers i González, Joaquim; Vetter, M.; Alcubilla González, Ramón; Soler Vilamitjana, David; Fonrodona Turon, Marta; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |
| 2000 | Thin Film Transistors obtained by Hot-Wire CVD | Puigdollers i González, Joaquim; Orpella, Albert; Dosev, D.; Voz Sánchez, Cristóbal; Pallarés Curto, Jordi; Marsal Garví, Lluís F. (Lluís Francesc); Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Alcubilla González, Ramón; Peiró, D. |
| 2001 | Thin silicon films ranging from amorphous to nanocrystalline obtained by Hot-Wire CVD | Soler Vilamitjana, David; Fonrodona Turon, Marta; Voz Sánchez, Cristóbal; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |
| 2005 | Top-gate microcrystalline silicon TFTs processed at low temperature (<200ºC) | Saboundji, A.; Coulon, N.; Gorin, A.; Lhermite, H.; Mohammed-Brahim, T.; Fonrodona Turon, Marta; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi |