Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/103227
Title: | Energetics and carrier transport in doped Si/SiO2 quantum dots |
Author: | Garcia-Castello, Nuria Illera Robles, Sergio Prades García, Juan Daniel Ossicini, Stefano Cirera Hernández, Albert Guerra, Roberto |
Keywords: | Transport d'electrons Semiconductors Electrònica quàntica Nanoelectrònica Electron transport Semiconductors Quantum electronics Nanoelectronics |
Issue Date: | 15-Jun-2015 |
Publisher: | Royal Society of Chemistry |
Abstract: | In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5 nm, embedded in a SiO2 matrix. Formation energy calculations reveal that the most energetically-favored doping sites are inside the QD and at the Si/SiO2 interface for P and B impurities, respectively. Furthermore, electron and hole transport calculations show in all the cases a strong reduction of the minimum voltage threshold, and a corresponding increase of the total current in the low-voltage regime. At higher voltage, our findings indicate a significant increase of transport only for P-doped Si-QDs, while the electrical response of B-doped ones does not stray from the undoped case. These findings are of support for the employment of doped Si-QDs in a wide range of applications, such as Si-based photonics or photovoltaic solar cells. |
Note: | Versió postprint del document publicat a: https://doi.org/10.1039/C5NR02616D |
It is part of: | Nanoscale, 2015, vol. 7, num. 29, p. 12564-12571 |
URI: | http://hdl.handle.net/2445/103227 |
Related resource: | https://doi.org/10.1039/C5NR02616D |
ISSN: | 2040-3364 |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) Publicacions de projectes de recerca finançats per la UE |
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659358.pdf | 3.32 MB | Adobe PDF | View/Open |
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