Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/10914
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dc.contributor.authorBulashenko, Olegcat
dc.contributor.authorBonilla, L. L. (Luis López), 1956-cat
dc.date.accessioned2010-01-26T08:52:00Z-
dc.date.available2010-01-26T08:52:00Z-
dc.date.issued1995cat
dc.identifier.issn0163-1829cat
dc.identifier.urihttp://hdl.handle.net/2445/10914-
dc.description.abstractSpatiotemporal chaos is predicted to occur in n-doped semiconductor superlattices with sequential resonant tunneling as their main charge transport mechanism. Under dc voltage bias, undamped time-dependent oscillations of the current (due to the motion and recycling of electric field domain walls) have been observed in recent experiments. Chaos is the result of forcing this natural oscillation by means of an appropriate external microwave signal.eng
dc.format.extent4 p.cat
dc.format.mimetypeapplication/pdfeng
dc.language.isoengeng
dc.publisherThe American Physical Societyeng
dc.relation.isformatofReproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.52.7849cat
dc.relation.ispartofPhysical Review B, 1995, vol. 52, núm. 11, p. 7849-7852eng
dc.relation.urihttp://dx.doi.org/10.1103/PhysRevB.52.7849-
dc.rights(c) The American Physical Society, 1995eng
dc.sourceArticles publicats en revistes (Física de la Matèria Condensada)-
dc.subject.classificationSemiconductorscat
dc.subject.classificationDinàmica de fluidscat
dc.subject.classificationEfecte túnelcat
dc.subject.otherSemiconductorseng
dc.subject.otherFluid dynamicseng
dc.subject.otherTunneling (Physics)eng
dc.titleChaos in resonant-tunneling superlatticeseng
dc.typeinfo:eu-repo/semantics/articleeng
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec517061cat
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Física de la Matèria Condensada)

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