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Title: Effect of rare earth on ZnO-based memristors
Author: Bonet Isidro, Ferran
Director/Tutor: Hernández Márquez, Sergi
Blázquez, O. (Oriol)
Keywords: Nanoelectrònica
Circuits electrònics
Teoria de la commutació
Treballs de fi de màster
Electronic circuits
Switching theory
Master's theses
Issue Date: Jul-2018
Abstract: Memristors are electronic devices that present resistive switching. Their main application is the fabrication of digital memories. In this work Tb doped-ZnO based memristors are characterized and their properties are compared to the ones of undoped ZnO devices. The study shows that it is possible to obtain switching in doped ZnO-based devices at lower currents. Devices doped with rare earth ions also exhibit light emission, while preserving their resistive switching properties. This was not observed in the undoped devices and is an important advantage for developing optically read digital memories. Finally, the electrical conduction mechanisms present in the memristors are also analyzed
Note: Màster en Nanociència i Nanotecnologia, Facultat de Física, Universitat de Barcelona, Curs: 2017-2018. Tutors: Sergi Hernández , Oriol Blázquez
Appears in Collections:Màster Oficial - Nanociència i Nanotecnologia

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