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Title: Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation
Author: Ramírez Ramírez, Joan Manel
Ferrarese Lupi, Federico
Jambois, Olivier
Berencén Ramírez, Yonder Antonio
Navarro Urrios, Daniel
Anopchenko, Aleksei
Marconi, Alessandro
Prtljaga, Nikola
Tengattini, Andrea
Pavesi, Lorenzo
Colonna, Jean-Philippe
Fedeli, Jean-Marc
Garrido Fernández, Blas
Keywords: Metall-òxid-semiconductors
Compostos de silici
Transferència d'energia
Metal oxide semiconductors
Silicon compounds
Energy transfer
Issue Date: 13-Mar-2012
Publisher: Institute of Physics (IOP)
Abstract: The electroluminescence (EL) at 1.54 µm of metal-oxide-semiconductor (MOS) devices with Er3+ ions embedded in the silicon-rich silicon oxide (SRSO) layer has been investigated under different polarization conditions and compared with that of erbium doped SiO2 layers. EL time-resolved measurements allowed us to distinguish between two different excitation mechanisms responsible for the Er3+ emission under an alternate pulsed voltage signal (APV). Energy transfer from silicon nanoclusters (Si-ncs) to Er3+ is clearly observed at low-field APV excitation. We demonstrate that sequential electron and hole injection at the edges of the pulses creates excited states in Si-ncs which upon recombination transfer their energy to Er3+ ions. On the contrary, direct impact excitation of Er3+ by hot injected carriers starts at the Fowler-Nordheim injection threshold (above 5 MV cm−1) and dominates for high-field APV excitation.
Note: Versió postprint del document publicat a:
It is part of: Nanotechnology, 2012, vol. 23, num. 12, p. 125203-125211
Related resource:
ISSN: 0957-4484
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
Publicacions de projectes de recerca finançats per la UE

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