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https://hdl.handle.net/2445/148184| Title: | Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices |
| Author: | Blázquez, O. (Oriol) Frieiro Castro, Juan Luis López Vidrier, Julià Guillaume, Clément Portier, Xavier Labbé, Christophe Sanchis, Pablo Hernández Márquez, Sergi Garrido Fernández, Blas |
| Keywords: | Òxid de zinc Pel·lícules fines Teoria de la commutació Nanoelectrònica Zinc oxide Thin films Switching theory Nanoelectronics |
| Issue Date: | 29-Oct-2018 |
| Publisher: | American Institute of Physics |
| Abstract: | The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present welldefined resistance states with more than five orders of magnitude difference in current. Both the high resistance state (HRS) and the low resistance state (LRS) were induced by either sweeping or pulsing the voltage, observing some differences in the HRS. Finally, the charge transport mechanisms dominating the pristine, HRS, and LRS states have been analyzed in depth, and the obtained structural parameters suggest a partial re-oxidation of the conductive nanofilaments and a reduction of the effective conductive area. Published by AIP Publishing. https://doi.org/10.1063/1.5046911 |
| Note: | Reproducció del document publicat a: https://doi.org/10.1063/1.5046911 |
| It is part of: | Applied Physics Letters, 2018, vol. 113, num. 183502 |
| URI: | https://hdl.handle.net/2445/148184 |
| Related resource: | https://doi.org/10.1063/1.5046911 |
| ISSN: | 0003-6951 |
| Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
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|---|---|---|---|---|
| 682896.pdf | 899.92 kB | Adobe PDF | View/Open |
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