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Title: Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices
Author: Blázquez, O. (Oriol)
Frieiro Castro, Juan Luis
López Vidrier, Julià
Guillaume, Clément
Portier, Xavier
Labbé, Christophe
Sanchis, Pablo
Hernández Márquez, Sergi
Garrido Fernández, Blas
Keywords: Òxid de zinc
Pel·lícules fines
Teoria de la commutació
Zinc oxide
Thin films
Switching theory
Issue Date: 29-Oct-2018
Publisher: American Institute of Physics
Abstract: The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present welldefined resistance states with more than five orders of magnitude difference in current. Both the high resistance state (HRS) and the low resistance state (LRS) were induced by either sweeping or pulsing the voltage, observing some differences in the HRS. Finally, the charge transport mechanisms dominating the pristine, HRS, and LRS states have been analyzed in depth, and the obtained structural parameters suggest a partial re-oxidation of the conductive nanofilaments and a reduction of the effective conductive area. Published by AIP Publishing.
Note: Reproducció del document publicat a:
It is part of: Applied Physics Letters, 2018, vol. 113, num. 183502
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ISSN: 0003-6951
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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