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Title: Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples
Author: Pitanti, Alessandro
Navarro Urrios, Daniel
Prtljaga, Nikola
Daldosso, Nicola
Gourbilleau, Fabrice
Rizk, Richard
Garrido Fernández, Blas
Pavesi, Lorenzo
Keywords: Semiconductors
Issue Date: 13-Sep-2010
Publisher: American Institute of Physics
Abstract: We report a spectroscopic study about the energy transfer mechanism among silicon nanoparticles (Si-np), both amorphous and crystalline, and Er ions in a silicon dioxide matrix. From infrared spectroscopic analysis, we have determined that the physics of the transfer mechanism does not depend on the Si-np nature, finding a fast (< 200 ns) energy transfer in both cases, while the amorphous nanoclusters reveal a larger transfer efficiency than the nanocrystals. Moreover, the detailed spectroscopic results in the visible range here reported are essential to understand the physics behind the sensitization effect, whose knowledge assumes a crucial role to enhance the transfer rate and possibly employing the material in optical amplifier devices. Joining the experimental data, performed with pulsed and continuous-wave excitation, we develop a model in which the internal intraband recombination within Si-np is competitive with the transfer process via an Auger electron"recycling" effect. Posing a different light on some detrimental mechanism such as Auger processes, our findings clearly recast the role of Si-np in the sensitization scheme, where they are able to excite very efficiently ions in close proximity to their surface. (C) 2010 American Institute of Physics.
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It is part of: Journal of Applied Physics, 2010, vol. 108, núm. 5, p. 53518-1-53518-8
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ISSN: 1089-7550
Appears in Collections:Publicacions de projectes de recerca finançats per la UE
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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