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dc.contributor.authorBonilla, L. L. (Luis López), 1956-cat
dc.contributor.authorRodríguez Cantalapiedra, Inmacat
dc.contributor.authorGomila Lluch, Gabrielcat
dc.contributor.authorRubí Capaceti, José Miguelcat
dc.description.abstractA general asymptotic analysis of the Gunn effect in n-type GaAs under general boundary conditions for metal-semiconductor contacts is presented. Depending on the parameter values in the boundary condition of the injecting contact, different types of waves mediate the Gunn effect. The periodic current oscillation typical of the Gunn effect may be caused by moving charge-monopole accumulation or depletion layers, or by low- or high-field charge-dipole solitary waves. A new instability caused by multiple shedding of (low-field) dipole waves is found. In all cases the shape of the current oscillation is described in detail: we show the direct relationship between its major features (maxima, minima, plateaus, etc.) and several critical currents (which depend on the values of the contact parameters). Our results open the possibility of measuring contact parameters from the analysis of the shape of the current oscillation.eng
dc.format.extent11 p.-
dc.publisherThe American Physical Societyeng
dc.relation.isformatofReproducció del document publicat a:
dc.relation.ispartofPhysical Review E, 1997, vol. 56, núm. 2, p. 1500-1510-
dc.rights(c) American Physical Society, 1997-
dc.sourceArticles publicats en revistes (Física de la Matèria Condensada)-
dc.subject.classificationFísica estadísticacat
dc.subject.classificationMatèria condensadacat
dc.subject.otherStatistical physicseng
dc.subject.otherCondensed mattereng
dc.titleAsymptotic analysis of the Gunn effect with realistic boundary conditionseng
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
Articles publicats en revistes (Física de la Matèria Condensada)

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