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http://hdl.handle.net/2445/22078
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DC Field | Value | Language |
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dc.contributor.author | Gomila Lluch, Gabriel | cat |
dc.contributor.author | Bulashenko, Oleg | cat |
dc.contributor.author | Rubí Capaceti, José Miguel | cat |
dc.contributor.author | Kochelap, V. A. (Viacheslav Aleksandrovich) | cat |
dc.date.accessioned | 2012-02-16T08:49:31Z | - |
dc.date.available | 2012-02-16T08:49:31Z | - |
dc.date.issued | 1998 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/2445/22078 | - |
dc.description.abstract | We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n+nn+ diodes, Schottky barrier diodes, field-effect transistors, etc., operating under strongly inhomogeneous distributions of the electric field and charge concentration | eng |
dc.format.extent | 9 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | eng |
dc.publisher | American Institute of Physics | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.367023 | - |
dc.relation.ispartof | Journal of Applied Physics, 1998, vol. 83, núm. 5, p. 2610-2618 | - |
dc.relation.uri | http://dx.doi.org/10.1063/1.367023 | - |
dc.rights | (c) American Institute of Physics, 1998 | - |
dc.source | Articles publicats en revistes (Física de la Matèria Condensada) | - |
dc.subject.classification | Semiconductors | cat |
dc.subject.classification | Soroll electrònic | cat |
dc.subject.classification | Díodes | cat |
dc.subject.classification | Transistors | cat |
dc.subject.classification | Camps elèctrics | cat |
dc.subject.classification | Microelectrònica | cat |
dc.subject.other | Semiconductors | eng |
dc.subject.other | Electronic noise | eng |
dc.subject.other | Diodes | eng |
dc.subject.other | Transistors | eng |
dc.subject.other | Electric fields | eng |
dc.subject.other | Microelectronics | eng |
dc.title | Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 143475 | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) Articles publicats en revistes (Física de la Matèria Condensada) |
Files in This Item:
File | Description | Size | Format | |
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143475.pdf | 190.19 kB | Adobe PDF | View/Open |
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