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https://hdl.handle.net/2445/24723| Title: | Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon |
| Author: | Georgakilas, Alexander Christou, Aris Zekentes, Konstantinos Mercy, J. M. Konczewic, L. K. Vilà i Arbonès, Anna Maria Cornet i Calveras, Albert |
| Keywords: | Camps magnètics Nanotecnologia Magnetic fields Nanotechnology |
| Issue Date: | 1-Jul-1994 |
| Publisher: | American Institute of Physics |
| Abstract: | Electrical transport in a modulation doped heterostructure of In0.53Ga0.47As/In0.52Al0.48As grown on Si by molecular beam epitaxy has been measured. Quantum Hall effect and Subnikov¿De Haas oscillations were observed indicating the two¿dimensional character of electron transport. A mobility of 20¿000 cm2/V¿s was measured at 6 K for an electron sheet concentration of 1.7×1012 cm¿2. Transmission electron microscopy observations indicated a significant surface roughness and high defect density of the InGaAs/InAlAs layers to be present due to the growth on silicon. In addition, fine¿scale composition modulation present in the In0.53Ga0.47As/In0.52Al0.48As may further limit transport properties. |
| Note: | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.357652 |
| It is part of: | Journal of Applied Physics, 1994, vol. 76, num. 3, p. 1948-1950 |
| URI: | https://hdl.handle.net/2445/24723 |
| Related resource: | http://dx.doi.org/10.1063/1.357652 |
| ISSN: | 0021-8979 |
| Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
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