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https://hdl.handle.net/2445/24743| Title: | Nanometer-scale oxidation of Si(100) surfaces by tapping mode atomic force microscopy |
| Author: | Pérez Murano, Francesc Abadal, G. Barniol i Beumala, Núria Aymerich Humet, Xavier Servat, J. Gorostiza Langa, Pablo Ignacio Sanz Carrasco, Fausto |
| Keywords: | Microscòpia de força atòmica Silici Nanoelectrònica Detectors Camps elèctrics Atomic force microscopy Silicon Nanoelectronics Detectors Electric fields |
| Issue Date: | 1-Dec-1995 |
| Publisher: | American Institute of Physics |
| Abstract: | The nanometer¿scale oxidation of Si(100) surfaces in air is performed with an atomic force microscope working in tapping mode. Applying a positive voltage to the sample with respect to the tip, two kinds of modifications are induced on the sample: grown silicon oxide mounds less than 5 nm high and mounds higher than 10 nm (which are assumed to be gold depositions). The threshold voltage necessary to produce the modification is studied as a function of the average tip¿to¿sample distance. |
| Note: | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.360505 |
| It is part of: | Journal of Applied Physics, 1995, vol. 78, núm. 11, p. 6797-6802 |
| URI: | https://hdl.handle.net/2445/24743 |
| Related resource: | http://dx.doi.org/10.1063/1.360505 |
| ISSN: | 0021-8979 |
| Appears in Collections: | Articles publicats en revistes (Ciència dels Materials i Química Física) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 105869.pdf | 745.76 kB | Adobe PDF | View/Open |
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