Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/24745
Title: | Structure of 60° dislocations at the GaAs/Si interface |
Author: | Vilà i Arbonès, Anna Maria Cornet i Calveras, Albert Morante i Lleonart, Joan Ramon Ruterana, Pierre Loubradou, Marc Bonnet, Roland |
Keywords: | Microscòpia electrònica Feixos moleculars Electron microscopy Molecular beams |
Issue Date: | 15-Jan-1996 |
Publisher: | American Institute of Physics |
Abstract: | High‐resolution electron microscopy technique has been applied to a detailed study of the 60° dislocations at the atomic layer molecular‐beam‐epitaxial GaAs/Si interface. Their deformation fields strongly interact with neighbor dislocations inducing irregular spacing between the cores and possible dissociations. Biatomic silicon steps were observed at the interface, but never inside 60° dislocation cores. Computer image simulation and elasticity calculations of the atomic displacement field have been used in order to determine the structure of the 60° dislocation; however, due to the Eshelby effect and to interaction with some neighbor dislocations, in many cases no theoreticalmodel could explain some observations. |
Note: | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.360812 |
It is part of: | Journal of Applied Physics, 1996, vol. 79, núm. 2, p. 676-681 |
URI: | http://hdl.handle.net/2445/24745 |
Related resource: | http://dx.doi.org/10.1063/1.360812 |
ISSN: | 0021-8979 |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
106453.pdf | 2.41 MB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.