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Title: Structure of 60° dislocations at the GaAs/Si interface
Author: Vilà i Arbonès, Anna Maria
Cornet i Calveras, Albert
Morante i Lleonart, Joan Ramon
Ruterana, Pierre
Loubradou, Marc
Bonnet, Roland
Keywords: Microscòpia electrònica
Feixos moleculars
Electron microscopy
Molecular beams
Issue Date: 15-Jan-1996
Publisher: American Institute of Physics
Abstract: High‐resolution electron microscopy technique has been applied to a detailed study of the 60° dislocations at the atomic layer molecular‐beam‐epitaxial GaAs/Si interface. Their deformation fields strongly interact with neighbor dislocations inducing irregular spacing between the cores and possible dissociations. Biatomic silicon steps were observed at the interface, but never inside 60° dislocation cores. Computer image simulation and elasticity calculations of the atomic displacement field have been used in order to determine the structure of the 60° dislocation; however, due to the Eshelby effect and to interaction with some neighbor dislocations, in many cases no theoreticalmodel could explain some observations.
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It is part of: Journal of Applied Physics, 1996, vol. 79, núm. 2, p. 676-681
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ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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