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https://hdl.handle.net/2445/24784| Title: | Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy |
| Author: | Roura Grabulosa, Pere López de Miguel, Manuel Cornet i Calveras, Albert Morante i Lleonart, Joan Ramon |
| Keywords: | Microscòpia electrònica Pel·lícules fines Electron microscopy Thin films |
| Issue Date: | 15-May-1997 |
| Publisher: | American Institute of Physics |
| Abstract: | A series of InxAl12xAs samples (0.51,x,0.55) coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x50.532, at 14 K we have obtained Eg05154966 meV. © 1997 American Institute of Physics. |
| Note: | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.365253 |
| It is part of: | Journal of Applied Physics, 1997, vol. 81, num. 10, p. 6916-6920 |
| URI: | https://hdl.handle.net/2445/24784 |
| Related resource: | http://dx.doi.org/10.1063/1.365253 |
| ISSN: | 0021-8979 |
| Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| 115846.pdf | 103.92 kB | Adobe PDF | View/Open |
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