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Title: | Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy |
Author: | Viera Mármol, Gregorio Huet, S. Bertrán Serra, Enric Boufendi, L. |
Keywords: | Pel·lícules fines Espectroscòpia Raman Nanoestructures Microelectrònica Radiofreqüència Optoelectrònica Thin films Raman spectroscopy Nanostructures Microelectronics Radio frequency Optoelectronics |
Issue Date: | 15-Oct-2001 |
Publisher: | American Institute of Physics |
Abstract: | In this study, we present a detailed structural characterization by means of transmission electron microscopy and Raman spectroscopy of polymorphous silicon (pm-Si:H) thin films deposited using radio-frequency dust-forming plasmas of SiH4 diluted in Ar. Square-wave modulation of the plasma and gas temperature was varied to obtain films with different nanostructures. Transmission electron microscopy and electron diffraction have shown the presence of Si crystallites of around 2 nm in the pm-Si:H films, which are related to the nanoparticles formed in the plasma gas phase coming from their different growth stages, named particle nucleation and coagulation. Raman scattering has proved the role of the film nanostructure in the crystallization process induced ¿in situ¿ by laser heating. |
Note: | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1398066 |
It is part of: | Journal of Applied Physics, 2001, vol. 90, núm. 8, p. 4272-4280 |
URI: | http://hdl.handle.net/2445/24793 |
Related resource: | http://dx.doi.org/10.1063/1.1398066 |
ISSN: | 0021-8979 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
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184386.pdf | 440.14 kB | Adobe PDF | View/Open |
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