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dc.contributor.authorGomila Lluch, Gabrielcat
dc.contributor.authorBulashenko, Olegcat
dc.description.abstractAn analytical theory to describe the combined effects of the epitaxial layer thickness and the ohmic contact on the noise properties of Schottky barrier diodes is presented. The theory, which provides information on both the local and the global noise properties, takes into account the finite size of the epitaxial layer and the effects of the back ohmic contact, and applies to the whole range of applied bias. It is shown that by scaling down the epitaxial layer thickness, the current regime in which the noise temperature displays a shot-noise-like behavior increases at the cost of reducing the current range in which the thermal-noise-like behavior dominates. This improvement in noise temperature is limited by the effects of the ohmic contact, which appear for large currents. The theory is formulated on general trends, allowing its application to the noise analysis of other semiconductor devices operating under strongly inhomogeneous distributions of the electric field and charge concentrations.eng
dc.format.extent9 p.-
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a:
dc.relation.ispartofJournal of Applied Physics, 1999, vol. 86, núm. 2, p. 1004-1012-
dc.rights(c) American Institute of Physics, 1999-
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationMatèria condensadacat
dc.subject.otherCondensed mattereng
dc.titleEffects of the epitaxial layer thickness on the noise properties of Schottky barrier diodeseng
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
Articles publicats en revistes (Física de la Matèria Condensada)

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