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dc.contributor.authorPellegrino, Paolocat
dc.contributor.authorGarrido Fernández, Blascat
dc.contributor.authorGarcía Favrot, Cristinacat
dc.contributor.authorArbiol i Cobos, Jordicat
dc.contributor.authorMorante i Lleonart, Joan Ramoncat
dc.contributor.authorMelchiorri, Mirkocat
dc.contributor.authorDaldosso, Nicolacat
dc.contributor.authorPavesi, Lorenzocat
dc.description.abstractWe report on the study and modeling of the structural and optical properties of rib-loaded waveguides working in the 600-900-nm spectral range. A Si nanocrystal (Si-nc) rich SiO2 layer with nominal Si excess ranging from 10% to 20% was produced by quadrupole ion implantation of Si into thermal SiO2 formed on a silicon substrate. Si-ncs were precipitated by annealing at 1100°C, forming a 0.4-um-thick core layer in the waveguide. The Si content, the Si-nc density and size, the Si-nc emission, and the active layer effective refractive index were determined by dedicated experiments using x-ray photoelectron spectroscopy, Raman spectroscopy, energy-filtered transmission electron microscopy, photoluminescence and m-lines spectroscopy. Rib-loaded waveguides were fabricated by photolithographic and reactive ion etching processes, with patterned rib widths ranging from 1¿to¿8¿¿m. Light propagation in the waveguide was observed and losses of 11dB/cm at 633 and 780 nm were measured, modeled and interpreted.eng
dc.format.extent8 p.-
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a:
dc.relation.ispartofJournal of Applied Physics, 2005, vol. 97, núm. 7, p. 074312/1-074312/8-
dc.rights(c) American Institute of Physics, 2005-
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationCiència dels materialscat
dc.subject.otherMaterials scienceeng
dc.titleLow-loss rib waveguides containing Si nanocrystals embedded in SiO2eng
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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